Dr. V S Santhosh N Varma B
Assistant Professor
svb@bvrithyderabad.edu.in
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Ph.D.: Electrical Engineering – Nanoelectronics and VLSI, (IIT Bombay)
M.Tech.: Mechanical Engineering – Nuclear Engineering and Technology, (IIT Kanpur)
B.Tech.: Electronics and Communication Engineering, (JNTU-Kakinada)
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Nano semiconductor device fabrication and simulations, Si, GaN, NAND Device Physics, DRAM Device physics, TCAD simulations of sub-micron CMOS, FinFETs, GAA, and CFETs.
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- Bellamkonda, VS Santhosh N. Varma, Swagato Bhunia, Ritam Sarkar, Kankat Ghosh, and Apurba Laha. “Study of surface over-layer contribution to Dislocation Assisted Tunneling current: Strategy to improve Pt/n+–GaN Schottky characteristics.” Materials Research Express 6, no. 10 (2019): 105917.
- Bellamkonda, VS Santhosh N. Varma, Brij Mohan Arora, Seshasainadh Pudi, Swagata Bhunia, and Apurba Laha. “Ultra high-sensitive, prompt response and recovering Pt/(Pt+ SiO2) cermet layer/GaN-based hydrogen sensor for life-saving applications.” Nanotechnology 31, no. 46 (2020): 46LT02.
- Pudi, Seshasainadh, Navneet Bhardwaj, Ritam Sarkar, V. S. Bellamkonda, Umang Singh, Anshul Jain, Swagata Bhunia, Soumyadip Chatterjee, and Apurba Laha. “Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT).” arXiv preprint arXiv:2308.08515 (2023).
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Permanent reviewer for IOPScience
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