ELECTRONICS AND COMMUNICATION ENGINEERING

Dr. G. Purnachandrarao

Dr. G. Purnachandrarao

Assistant Professor
purnachandrarao.g@bvrithyderabad.edu.in

AICTE ID: 1-44807139376
JNTUH ID: 93150403-111327
Ratified Status: Ratified

Ph.D.: Design and Modelling of III-Nitride/β-Ga2O3 Nano-HEMT for Emerging THzand High-Power Nanoelectronics Applications, NIT Silchar, 2024.
M.Tech.:Novel carry look ahead approach to a unified BCD/BINARY Adder/Subtractor, Anurag Engineering College, JNTU Hyderabad.
B.Tech.: Vaagdevi College of Engineering, JNTU Hyderabad.

Teaching Experience: 13 Years
Research Experience: 04 Years
Industry Experience: Nil 

Scopus ID: 57886960800
WoS ID: JNS-1647-2023
Google Scholar ID: 7xxt_S8AAAAJ
Vidwan ID: 606192
ORCID ID: 0000-0001-8680-5739

Device Modelling,  Nanoelectronics,   Compact Modelling and Simulation of AlGaN/GaN and AlGaN/GaN/Ga2O3 based HEMT for high-power and high-speed electronics

  • Qualified in DEC – 2018 UGC – NET
  • Qualified in GATE – 2020
  1. P. Rao, T. R. Lenka, V. Vadalà, H. P. T. Nguyen, “Device Structural Engineering and Simulation Modelling of III-Nitride/β-Ga2O3 Nano-HEMT Towards RF and Terahertz Applications”, PhysicaScripta (IOP), 21st October, 2024, Vol: , issue: , pp: , DOI: 10.1088/1402-4896/ad8991.(SCI)
  2. P. Rao, T. R. Lenka, H. P. T. Nguyen, N. El. I. Boukortt, G. Crupi, “Effect of Temperature Dependence of 2DEG on Device Characteristics of Field-Plated Recessed-Gate III-Nitride/β-Ga2O3 Nano-HEMT”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), 29th July-2024, Vol: , issue: , pp: , DOI: 10.1002/jnm.3281.(SCI)
  3. P. Rao, T. R. Lenka, H. P. T. Nguyen, “Linearity Analysis of III-Nitride/β-Ga­2O3 Nano-HEMT for Emerging RF/Microwave Applications”, Microsystem Technologies (Springer), 27th July-2024. DOI: 10.1007/s00542-024-05736-6. (SCI).
  4. P. Rao, T. R. Lenka, V. Vadala, H. P. T. Nguyen, “Characteristics Study of Heterojunction III-Nitride/β-Ga2O3 Nano-HEMT for THz Applications,” Engineering Research Express (IOP), 11th April-2024,Vol:6 , No. 2, issue: , DOI: 10.1088/2631-8695/ad3db1.(ESCI)
  5. P. Rao, T. R. Lenka, H. P. T. Nguyen, “Field-Plated and Back-Barrier Engineered Wide bandgap III-Nitride/β-Ga2O3 Nano-HEMT for Emerging RF/Microwave Micro/Nanoelectronics Applications”, MicroelectronicsReliability (Elsevier), 13th March, 2024, Vol:155 , issue: , DOI: 10.1016/j.microrel.2024.115365.(SCI)
  6. P. Rao, T. R. Lenka, H. P. T. Nguyen, “Realization of Kink Effect in the Drain Characteristics of III-Nitride/β-Ga2O3 Nano-HEMT due to Traps and Self-Heating”, Facta Universitatis, Series: Electronics and Energetics, 30th June, 2024,Vol: 37, issue:2 , pp: 289-299, DOI:10.2298/FUEE2402289R. (ESCI)
  7. P. Rao, T. R. Lenka, N. El. I. Boukortt, S. Md. Sharif, H. P. T. Nguyen, “Investigation of performance enhancement of a Recessed Gate Field-Plated AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3 substrate with variation of AlN Spacer layer thickness”, Journal of Materials Science: Materials in Electronics (Springer),29thJune – 2023 , Vol: 34, issue: 18, pp:1442, DOI: 10.1007/s10854-023-10867-z (SCI)
  8. P. Rao, T. R. Lenka, N. El. I. Boukortt, H. P. T. Nguyen, “Investigation of DC and RF Characteristics of Spacer Layer Thickness Engineered Recessed Gate and Field-Plated III-Nitride Nano-HEMT on β-Ga2O3 Substrate”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), 07thJune – 2023, Vol: 37, issue: 1, pp:e3138, DOI: 10.1002/jnm.3138 (SCI)
  9. P. Rao, T. R. Lenka, H. P. T. Nguyen, “Analysis of Channel length, Gate length and Gate position Optimization of III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics and Terahertz Applications”, Materials Science and Engineering: B (Elsevier), 11thApril – 2023,Vol: 293, issue:, pp: 116498, DOI: 10.1016/j.mseb.2023.116498.(SCI)
  10. P. Rao, T. R. Lenka, R. Singh, N. El. I. Boukortt, S. Md. Sharif and Hieu P. T. Nguyen, “Comparative Study of III-Nitride Nano-HEMTs on different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications,” Journal of Electronic Materials (Springer), 24th December – 2022, Vol: 52, issue:3, pp: 1948-1957, DOI:10.1007/s11664-022-10145-4.(SCI)
  11. P. Rao, T. R. Lenka, R. Singh, N. El. I. Boukorttand Hieu P. T. Nguyen, “Simulation Modelling of III-Nitride/β-Ga2O3Nano-HEMT for Microwave and Millimeter Wave Applications,” International Journal of RF & Microwave Computer Aided Engineering (Wiley), 15th September-2022; Vol: 32, issue: 12, pp: e23416,  DOI: 10.1002/mmce.23416. (SCI)
  12. P Rao, R. Singh, T. R. Lenka, and Hieu P. T. Nguyen, “Simulation Modelling of III-Nitride/β-Ga2O3 HEMT for Emerging High-Power Nanoelectronics Applications,” Journal of the Korean Physical Society (Springer), 09thSeptember – 2022;Vol: 81, issue:9, pp: 876-884 ,DOI: 10.1007/s40042-022-00603-x. (SCI)
  13. Singh, G. P. Rao, T. R. Lenka, S. V. S. Prasad, N. El. I. Boukortt, G. Crupi, H. P. T. Nguyen, “Design and simulation of T-gate AlN/β-Ga2O3 HEMT for DC, RF and high-power nanoelectronics switching applications”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), 30th June – 2023, Vol: 37, issue: 1, pp: e3146, DOI: 10.1002/jnm.3146 (SCI)
  14. E. Raghuveera, T. R. Lenka, G. P. Rao, V. Vadalà, H. P. T. Nguyen, “Development of a physics-based 2DEG Analytical and Simulation model of AlGaN/GaN HEMT Biosensor for Biomolecule detection – An algorithmic approach”, Microsystem Technologies (Springer), DOI: 10.1007/s00542-024-05825-6 (SCI)
  1. P. Rao, T. R. Lenka, H. P. T. Nguyen, “DC and RF Characteristics Study of III-Nitride/β-Ga2O3 Nano-HEMT with the variation of Relative Gate Positions”, 8th IEEE Electron Devices Technology and Manufacturing Conference (IEEE EDTM 2024),Bangalore, India, 4th– 6thMarch, 2024. doi:10.1109/EDTM58488.2024.10511356.(IEEE Xplore – Scopus)(A*)
  2. P. Rao, T. R. Lenka, H. P. T. Nguyen, “Investigation of the DC Performance Characteristics of AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 Substrate with a Graded AlGaN Buffer”, 8th IEEE International Conference on Computers and Devices for Communication (IEEE CODEC 2023), Kolkata, India, 14th -16th Dec, 2023.doi: 0.1109/CODEC60112.2023.10466025.(IEEE Xplore – Scopus)(A)
  3. P. Rao, T. R. Lenka, and Hieu Pham T. Nguyen, “Analysis of the Analog Performance characteristics ofIII-Nitride/β-Ga2O3 Nano-HEMT for emerging RF Applications,” 4th Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS 2024), Silchar, India, 29th -30th Jan, 2024, (Springer LNEE-Scopus-Accepted).
  4. P. Rao, T. R. Lenka, N. El. I. Boukortt, H. P. T. Nguyen, “Performance Analysis of Gate Engineered III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics”, 56th IEEE International Symposium on Circuits and Systems (IEEE ISCAS 2023), Monterey, CA, USA, 22nd -24th May, 2023, pp. 1-4, doi: 10.1109/ISCAS46773.2023.10181917.(IEEE Xplore – Scopus)(A*)
  5. P. Rao, T. R. Lenka, Nour El. I. Boukortt, and Hieu Pham T. Nguyen, “Investigation of the Temperature Impact on the performance characteristics of the field-plated recessed gate III-nitride HEMT on β-Ga2O3 substrate,” 3rd Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS 2023), Silchar, India, 29th -31st Jan, 2023, pp. 111-121,doi:10.1007/978-981-99-4495-8_8. (Springer LNEE-Scopus)
  6. P. Rao, N. Baruah, T. R. Lenka, R. Singh, S. Md. Sharif, and Hieu P. T. Nguyen, “Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3 Substrate for Emerging Terahertz Applications,” 6thIEEE International Conference on Emerging Electronics (IEEE ICEE), Bangalore, India, 12th -14th Dec, 2022, pp. 1-4, doi: 10.1109/ICEE56203.2022.10118010. (IEEE Xplore – Scopus)(A*)
  7. P. Rao, T. R. LenkaR. Singh, H.P. T. Nguyen, N. El. I. Boukortt and G. Crupi “Breakdown Characteristics Study of III-Nitride/β-Ga2O3 Nano-HEMT as a function of Field-Plate Length & AlN Nucleation Layer Thickness,” 3rdIEEE IEEE Kolkata Conference 2022 (IEEE CALCON 2022), Kolkata, India, 10th – 11th Dec, 2022, pp. 30-33, doi: 10.1109/CALCON56258.2022.10060173.(IEEE Xplore – Scopus)(A)
  8. P. Rao, N. Baruah, T. R. LenkaR. Singh, N. El. I. Boukorttand Hieu P. T. Nguyen, “The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga2O3 Nano-HEMT,” 2ndIEEE Electron Device Kolkata Conference 2022 (IEEE EDKCON 2022), Kolkata, India, 26th -27th Nov, 2022, pp. 434-439, doi: 10.1109/EDKCON56221.2022.10032868.(IEEE Xplore – Scopus)
  9. Singh, G. P. Rao, T. R. Lenka,S. V. S.  Prasad, D. Kiran, P. Singh, and Hieu P. T. Nguyen, “Investigation of normally-off β-Ga2O3 Power MOSFET using Ferroelectric Gate,” 3rd Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS 2023), Silchar, India, 29th -31st Jan, 2023, pp. 189-197, doi: 10.1007/978-981-99-4495-8_14. (Springer LNEE-Scopus)
  10. Raghuveera,G. P. Rao, T. R. Lenka, “Prospects of III-V Semiconductor-based High Electron Mobility Transistors (HEMTs) towards Emerging Applications ,” 3rd Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS 2023), Silchar, India, 29th -31st Jan, 2023, pp. 123-137, doi: 10.1007/978-981-99-4495-8_9.(Springer LNEE-Scopus)
  11. P. Rao, T. R. Lenka, S. Md. Sharif, and Hieu P. T. Nguyen, “Investigation of Performance Enhancement of Recessed Gate Field-Plated AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3 Substrate with Variation of AlN Spacer Layer Thickness,” International Symposium on Semiconductor Materials and Devices-2022 (ISSMD-2022)), 15th -16th Dec, 2022, Bhubaneshwar, India.
  12. B. Saritha, K. Karthik, G P. C. Rao, A. Harshitha, Ch. Spoorthy R, and B. Sravanthi “ Deep Learning-Based Optimized YOLOv5 for Enhanced Surface Defect Detection in Ceramic,” 7th IEEE International Conference on Signal Processing, Computing and Control (IEEE-ISPCC 2k25), WagnaghatSolan, H. P, India, 6th – 8th March, 2025, pp. 1-6, doi: . (IEEE Xplore – Scopus) (A)
  1. “A DEVICE FOR DESIGNING HAFNIUM (IV) OXIDE (HFO2)/ SILICON DIOXIDE (SIO2) ENCAPSULATION-BASED III-NITRIDE MULTI-QUANTUM WELL NANOWIRE WHITE-LED”, Patent No. 2022/12105, Republic of South Africa.
  2. Eine n-dotierte a-Si/CZTSe-Ultra-Dunnschicht-Solarzelle fur die Energiegewinnung”, Patent No. 20 2022 102 674, Deutsches

Nil

Life Member of Indian Society for Technical Education (LMISTE), since 2013

  • I have been invited to give a talk at Assam University, Assam, on the topic “VLSI Technology: Its History and Applications in Modern Technology“
  • I have been invited to deliver a talk at Patel Engineering College, Odisha, on the topic “Fundamentals of Semiconductor Devices”

Nil

  • IEEE-Access Journal
  • IEEE Electron Device Letter
  • Journal of Electronic Materials
  • Microelectronics
  • Journal of Materials Science: Materials in Electronics
  • Contributed as a Teaching Assistant in Two-week ISTE workshop on “Signals & Systems” conducted by IIT Kharagpur from 2nd to 12th January, 2014, held under National Mission on Education through ICT (MHRD) at SVS Institute of Technology, Warangal.
  • Two week FDP on “Recent Trends in Embedded Systems & Signal Processing” from 21st September to 4th October, 2013, at SVS Institute of Technology, Warangal.
  • National Level Technical Symposium “Techfest’10” on 13th March, 2010 at Dr. Paul Raj Engineering College, Bhadrachalam.
  • INUP-i2i 2023 Familiarization workshop on Quantum Materials and Nano Devices, organised by the centre for Nanotechnology, IIT Guwahathi, from 6th to 8th December 2023.
  • One week workshop on Recent Trends in Innovative CMOS-MEMS Technologies and applications: Hands on Learning organized by Dept. of E. C. E, NIT Silchar from 11th to 18th September, 2020.
  • One week workshop on NEMS Technologies: Modern Interdisciplinary Approach in Engineering (NEMS Tech 2020) organised by Dept. of Mech and E. I. E, NIT Silchar from 17th to 21st August 2020.
  • Two-week ISTE workshop on “Computer Programming” conducted by IIT Bombay from 20th May to 21st June, 2014, held under National Mission on Education through ICT (MHRD).
  • Two-week ISTE workshop on “Signals & Systems” conducted by III Kharagpur from 2nd to 12th January, 2014, held under National Mission on Education through ICT (MHRD).
  • Two-week ISTE workshop on “Analog Electronics” conducted by IITKharagpur from 4thto 14th June, 2013, held under National Mission on Education through ICT (MHRD).
  • Two-day workshop on Research and Teaching in Image Processing and Pattern Recognition on 9th to 10th November, 2013 , organized by Dept. C. S. E at IIIT Hyderabad.
  • Two Day workshop on RF Circuit & System Design on 12th to 14th September, 2011, organized by Dept. of C. E at KL University, Guntur.
  • Two-day workshop on VLSI System Design on 7th August to 8th august 2010 organized by Dept. of E. C. E at SVS Group of Institutions
  • Teaching & Mentoring
  • Curriculum Development
  • Research & Publications
  • Examinations & Assessments
  • Student Development & Training